Last updated: 28/10/2010

Growth Facilities
    UHV MBE/sputter
    HiTUS

Nanofabrication
    e-beam lithography
    Photolithography
    FIB
    Cleanroom

Characterisation
    XRD
    GHz pulse measurement
    Dilution refrigerator
    VSM
    AGFM
    MR prober
    Annealing furnace
    MOKE
    HRTEM/STEM
    TEM
    SEM
    SPM
    Sample preparation
    Particle analyser

E-Beam Lithography

JEOL JBX-6300FS

E-beam lithography
 

This system is under construction by JEOL and is planned to be installed in the University of Leeds by the end of June 2011. Our group has 25% of the quota with a dedicated experimental officer to be appointed. This system satisfies the following capabilities:

  • Acceleration voltage: 25, 50 & 100 kV
  • Electon gun: ZrO/W Schottky
  • Electron-beam: < 2 nm in diameter
  • Wafer handling: 10 wafer loader (5 mm square ~ 4" wafer)
  • Overlay accuracy: < ± 20 nm
  • Stitching accuracy: < ± 20 nm
  • Minimum feature: < 10 nm
    Rossette
    Example of a rosette cinsisting of 10 nm wide metallic wire.
This system was purchased by EPSRC critical mass grant.