Surface electronic structure of two- and three dimensional holmium silicide on Si(111), Phys. Rev. B, 2009, 79 245406 *selected for the Virtual Journal of Nanoscale Science and Technology, Volume 19, Issue 25 (2009)
The growth of an ordered Mn layer on the Si(111)-1×1-Ho surface, J. Phys.: Cond. Matt., 2009, 21 265001.
Scanning magneto-optical lens for surface analysis, J. Phys. D: Appl. Phys., 2009, 42 055308.
Structural and electronic properties of rare-earth nanowires, in Nanowires—Synthesis, Properties, Assembly and Applications, edited by Y. Cui, E.P.A.M. Bakkers, L. Lauhon, A. Talin (Mater. Res. Soc. Symp. Proc., Warrendale, PA), 2009, 1144-LL04-24.
Metastable de-excitation spectroscopy and scanning tunneling microscopy study of the 2x4 and 2x7 reconstructions of Ho on Si(001), Phys. Rev. B, 2008, 78 155430.
Use of Monte Carlo modelling to aid interpretation and quantification of the low energy-loss electron yield at low primary energies, Microsc. Microanal., 2008, 14 439.
Medium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100), Phys. Rev. B, 2008, 78 035423.
New multichannel electron energy analyzer with cylindrically symmetrical electrostatic field, Rev. Sci. Instr., 2007, 78 053714.
Quantitative LEED I-V and ab initio study of the Si(111)-3×2-Sm surface structure and the missing half-order spots in the 3×1 diffraction pattern, Phys. Rev. B, 2007, 75 205420.
Quantitative interpretation of the low-loss electron signal, Surf. Sci., 2007, 601 1804-1812.
Laser-cooled atoms as a focused ion beam source, Phys. Rev. A, 2006, 74 063416.
Using laser-cooled atoms as a focused ion beam source, J. Vac. Sci. Technol. B, 2006, 24 2907-2910.
STM and ab initio study of holmium nanowires on a Ge(111) surface, Phys. Rev. B, 2006, 74 193318.
Self-assembly of ultrafine nanolines upon Ho reaction with the Ge(001) surface, Appl. Phys. Lett., 2006, 89 203119.
Medium-energy ion scattering investigation of the surface and subsurface structure of three-dimensional HoSi2-x grown on Si(111), Phys. Rev. B, 2006, 73 235405.
Laser cooling transitions in atomic erbium, Opt. Express, 2005, 13 3185-3795.
A medium-energy ion scattering investigation of the structure and surface vibrations of two-dimensional YSi2 grown on Si(111), Surf. Sci., 2005, 598 120-127.
Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicide, Phys. Rev. B., 2005, 63 195406.
Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update, Surf. Interface Anal., 2005, 37 p. 901-911.
Energy loss in medium-energy ion scattering: A combined theoretical and experimental study of the model system Y on Si(111), Phys. Rev. B, 2005, 72 075415.
Trends and strain in the structures of two-dimensional rare-earth silicides studied using medium-energy ion scattering, Phys. Rev. B, 2005, 72 165407.
Methylsilane on Cu(111), a MDS study of the formation of the surface silicide, Chem. Phys. Lett., 2005, 412 p. 434-438.
Methylsilane on Cu(111), a STM study of the (√ 3 x √ 3)R30°-Cu2Si surface silicide, Surf. Sci., 2005, 585 p. 47-52.
Improved metastable de-excitation spectrometer using laser-cooling techniques, Rev. Sci. Instr., 2005, 76 p. 053102.
Growth and electronic structure of holmium silicides by STM and STS, Surface Science, 2005, 578(1-3), p. 80-87.
A differentially pumped secondary electron detector for low-vacuum scanning electron microscopy, Scanning, 2003, 25(5), p. 243-246.
Hyperbolic field electron energy analyzer with second order focusing, Rev. Sci. Instr., 2003, 74(10), p. 4298-4300.
Surface diffusion and electron stimulated desorption of chlorine from the surface of InP(110) and GaAs(110),
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Structural studies of two- and three-dimensional dysprosium silicides using medium-energy ion scattering, Surf. Sci., 2002, 512(1-2), p. 61-66.
Structural study of 2D dysprosium germanide and silicide by means of quantitative LEED I-V analysis, Surf. Sci., 2002, 504(1-3), p. 183-190.
Structure analysis of two-dimensional Holmium silicide by low energy electron diffraction, Surf. Sci., 2001, 482, p. 1481-1486.
Monolayer resolution in medium energy ion scattering, Nucl. Instrum. Meth. B, 2001, 183(1-2), p. 62-72.
Scanning Anger microscopy: recent progress in data analysis and instrumentation, J. Electron. Spectrosc., 2001, 114, p. 277-282.
Investigation of a two-dimensional dysprosium germanide on Ge(111): A medium-energy ion-scattering study including direct observation of a reversal of top-layer buckling upon adsorption of hydrogen, Phys. Rev. B, 2001, 63(4), p. 049901.
Nondestructive angle-resolved X-ray depth profiling: Interpretation of angle-resolved profiles using a Monte Carlo approach, Microsc. Microanal., 2000, 6(6), p. 517-531.
From LEED to MULSAM, Surf. Interface. Anal., 2000, 29(9), p. 561-571.
Investigation of a two-dimensional dysprosium germanide on Ge(111): A medium-energy ion-scattering study including direct observation of a reversal of top-layer buckling upon adsorption of hydrogen, Phys. Rev. B, 2000, 62(8), p. 5016-5020.
A medium-energy ion scattering study of the Si(111)(√ 3 x √ 3)R30°-Pb (beta-phase) surface, J. Phys.-Condens. Mat., 2000, 12(22), p. 4699-4711.
Quantitative AES-mapping and depth profiling, Mikrochim. Acta., 2000, 132(2-4), p. 225-236.
Formation of a palladium-silicon interface by silane chemical vapor deposition on Pd(100), Phys. Rev. B, 2000, 61(12), p. 8443-8449.
Medium-energy ion scattering studies of two-dimensional rare-earth silicides, Phys. Rev. B, 2000, 61(8), p. 5707-5713.
Contribution of singly and doubly ionized argon to the autoionization (Auger) spectrum of argon excited by bombardment of magnesium and scandium surfaces, J. Phys.-Condens. Mat., 2000, 12(7), p. 1527-1537.
