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Last updated: 02/01/2023

 

1. S. Bhatti, R. Sbiaa, A. Hirohata, H. Ohno, S. Fukami, and S. N. Piramanayagam,
   "Spintronics based random access memory: a Review,"
   Materials Today 20, 530 (2017).
   
2. A. Hirohata, T. Huminiuc, J. Sinclair, H. Wu, M. Samiepour, G. Vallejo-Fernandez, K. O'Grady, J. Balluff, M. Meinert, G. Reiss, E. Simon, S. Khmelevskyi, L. Szunyogh, R. Yanes, U. Nowak, T. Tsuchiya, T. Sugiyama, T. Kubota, K. Takanashi, N. Inami and K. Ono,
   "Development of antiferromagnetic Heusler alloys for the replacement of critically raw iridium,"
   Journal of Physics D: Applied Physics 50, 443001 (2017).
   
3. N. Takahashi, T. Huminiuc, Y. Yamamoto, T. Yanase, T. Shimada, A Hirohata and T. Nagahama,
   "Fabrication of epitaxial Fe₃O₄ film on a Si(111) substrate,"
   Scientific Reports 7, 7009 (2017).
   
4. H. Wu, G. Vallejo-Fernandez and A. Hirohata,
   "Magnetic and structural properties of antiferromagnetic Mn₂VSi alloy films grown at elevated temperatures,"
   Journal of Physics D: Applied Physics 50, 375001 (2017).
   
5. J. Balluff, T. Huminiuc, M. Meinert, A. Hirohata and G. Reiss,
   "Integration of antiferromagnetic Heusler compound Ru₂MnGe into spintronic devices,"
   Applied Physics Letters 111, 032406 (2017) arXiv.
   
6. C. N. T. Yu, A. J. Vick, N. Inami, K. Ono, W. Frost and A. Hirohata,
   "Exchange bias induced at a Co₂FeAl_0.5Si_0.5/Cr interface,"
   Journal of Physics D: Applied Physics 50, 125004 (2017).