Last updated: 11/09/2019
Growth Facilities
UHV MBE/sputter
HiTUS
Nanofabrication
e-beam lithography
Photolithography
FIB
Cleanroom
Characterisation
Probe station
XRD
GHz pulse measurement
Dilution refrigerator
VSM
AGFM
MR prober
Probe station
Annealing furnace
MOKE
HRTEM/STEM
TEM
SEM
SPM
Sample preparation
Particle analyser
Hi Target Utilisation Sputtering System
Plasma Quest HiTUS
- Base pressure: < 3×10-5 Pa
- Sputtering pressure: 3×10-1 Pa
- rf plasma steering bias: -100 ~ -990 V
- Sputtering targets: 8×2" targets
- Substrate holder: 6 positions
- Substrate temperature: room temperature ~ 300 °C