Last updated: 11/09/2019
Growth Facilities
UHV MBE/sputter
HiTUS
Nanofabrication
e-beam lithography
Photolithography
FIB
Cleanroom
Characterisation
Probe station
XRD
GHz pulse measurement
Dilution refrigerator
VSM
AGFM
MR prober
Probe station
Annealing furnace
MOKE
HRTEM/STEM
TEM
SEM
SPM
Sample preparation
Particle analyser
Photolithography
Süss MicroTec MA6
- Light source: 350 W Hg lamp
- Wafer: < 6" in dieameter
- Wafer thickness: < 4.5 mm
- Exposure modes: vacuum, hard & soft contact
- Minimum feature: < 1 μm